Analytical design and numerical verification

Name: Analytical design and numerical verification
Brand: VDM Verlag
SKU: 9783639252293
Price: 81.37 EUR
Availability: InStock

Автор: Mohan Gopal

Език:

Корици: С меки корици

Издател: VDM Verlag

Наличност: Налично при издателя, по поръчка

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81.37 € 159.15 лв

Strain in SiGe thin films yields enhanced mobilities for both electrons and holes. Addition of Ge to...

Информация за книгата

Автор

Mohan Gopal

Език

Английски език

Корици

Книга - С меки корици

Издадена

2010

страници

384

EAN

9783639252293

ISBN

3639252292

Enbook ID

06832732

Издател

VDM Verlag

Теглоt

562

Размери

152 x 229 x 22

Пълно описание

Strain in SiGe thin films yields enhanced mobilities for both electrons and holes. Addition of Ge to Si also reduces the band gap. These effects make band gap engineering and very high speed devices feasible in all silicon technology. In addition SiGe processing is compatible to silicon process technology. In this book a fast analytical design program for the design of p-channel hetero MOSFET (p-HMOSFET) is discussed.The one dimensional Poisson equation is solved for a simple p-HMOSFET. Using these results an Excel spreadsheet is used as a tool to design a complete analytical design program that can provide internal as well as terminal parameters of this device. The analytical program is tested by comparing the results with ISE-TCAD numerical device simulator results. The results were found to match very well. Compared to the numerical simulator the analytical program yields results in a fraction of the time and is found to be a good design tool for fast interactive design and optimization of the device. . For the device of choice variable parameters are identified. It is found that these parameters are interconnected in many ways and trade offs between them is necessary.

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