Dielectric and Work Function Engineered Doping-Less Tunnel FET

Name: Dielectric and Work Function Engineered Doping-Less Tunnel FET
Brand: LAP LAMBERT Academic Publishing
SKU: 9786202672030
Price: 65.65 EUR
Availability: InStock

Автор: N. B. Balamurugan

Език:

Корици: С меки корици

Издател: LAP LAMBERT Academic Publishing

Наличност: Външен склад

Изпращаме след 5-8 дни

65.65 € 128.39 лв

The perpetual downscaling of devices has achieved higher packaging density and faster switching perf...

Информация за книгата

Автор

N. B. Balamurugan

Език

Английски език

Корици

Книга - С меки корици

Издадена

2020

страници

200

EAN

9786202672030

ISBN

620267203X

Enbook ID

36932783

Издател

LAP LAMBERT Academic Publishing

Теглоt

316

Размери

150 x 220 x 12

Пълно описание

The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and subthreshold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET's (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson's equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator.

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