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Книга Electron Beam Lithography Process Optimization Rohan Handa

Electron Beam Lithography Process Optimization

An Experimental Design Study

Автор: Rohan Handa, Linfei Gu
Език: Английски език
Корици: С меки корици
Издател: Grin Verlag
Наличност: Външен склад
Изпращаме след 8-11 дни
15.70 € 30.70 лв
Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), printed sin...

Информация за книгата

Автор
Rohan Handa, Linfei Gu
Език
Английски език
Корици
Книга - С меки корици
Издадена
2011
страници
36
EAN
9783656083160
ISBN
3656083169
Enbook ID
01671828
Издател
Grin Verlag
Теглоt
54
Размери
140 x 216 x 2

Пълно описание

Technical Report from the year 2011 in the subject Design (Industry, Graphics, Fashion), printed single-sided, grade: -, University of Southern California, language: English, abstract: Currently, nanowires have aroused intensive attention due to their interesting electric and optical properties as well as potentially wide application (For example, nanowires can be used as a promising structure for transistor channels). For compound semiconductor nanowires, Nanoscale Selective Area MOCVD (Metalorganic Chemical Vapor Deposition), or NS-SAG, is a very attractive growth technique for the fabrication of sophisticated nanowire structure, because by using this technique, diameter and location of wires are controllable, with no incorporation of unwanted metals. It is achieved by deposition of a nano-openingarray -patterned dielectric mask above the substrate. Since crystals cannot be formed on dielectric mask, nanowire growth only occurs at openings, with desired diameters and locations, as shown in Fig 1. Pattern of nano opening arrays is of vital importance since it governs the size, location and density of nanowires as wells as growth rate and behavior.

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