Integrated Electronics on Aluminum Nitride

Name: Integrated Electronics on Aluminum Nitride
Brand: Springer, Berlin
SKU: 9783031171987
Price: 210.0 EUR
Availability: InStock

Materials and Devices

Автор: Reet Chaudhuri

Език:

Корици: С твърди корици

Издател: Springer, Berlin

Наличност: Външен склад

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This thesis outlines the principles, device physics, and technological applications of electronics b...

Информация за книгата

Автор

Reet Chaudhuri

Език

Английски език

Корици

Книга - С твърди корици

Издадена

2022

страници

255

EAN

9783031171987

Enbook ID

41407874

Издател

Springer, Berlin

Теглоt

557

Размери

155 x 235 x 21

Пълно описание

This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.

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Integrated Electronics on Aluminum Nitride

Materials and Devices

Информация за книгата

Пълно описание

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