Leakage currents in MOS transistor

Name: Leakage currents in MOS transistor
Brand: LAP Lambert Academic Publishing
SKU: 9783659891656
Price: 32.99 EUR
Availability: InStock

Автор: P. K. Bikki, P. Karuppanan

Език:

Корици: С меки корици

Издател: LAP Lambert Academic Publishing

Наличност: Външен склад

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In order to bring the classification of leakage minimization approaches, analyzed based on their fun...

Информация за книгата

Автор

P. K. Bikki, P. Karuppanan

Език

Английски език

Корици

Книга - С меки корици

Издадена

2017

страници

EAN

9783659891656

Enbook ID

16426638

Издател

LAP Lambert Academic Publishing

Теглоt

Размери

150 x 220 x 3

Пълно описание

In order to bring the classification of leakage minimization approaches, analyzed based on their fundamental design and mechanism, such as biasing technique, power gating, and multi-threshold techniques. A brief summary of different leakage control schemes with their merits and demerits along with the limitations by using these schemes are presented. In this survey, origins of leakage currents in a short-channel device and various leakage control techniques for ultra-low power SRAM design are discussed. The rest of the book chapter is organized as follows. In section 2 presents the origin of leakage current in a short-channel device. Various biasing techniques for leakage control SRAM are discussed in section 3. Emerging power gating techniques for low power SRAM designs are presented in section 4. Asymmetrical SRAM designs with multi-threshold transistor are described and comparisons of various low power techniques are tabulated in section 5. Finally, the survey chapter concludes in section 6.

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Leakage currents in MOS transistor

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