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Книга Magnetic Memory Technology Denny D. Tang

Magnetic Memory Technology

Автор: Denny D. Tang, Chi-Feng Pai
Език: Английски език
Корици: С твърди корици
Издател: John Wiley and Sons Ltd
Наличност: Външен склад
Изпращаме след 14-20 дни
133.30 € 260.70 лв
STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURC...

Информация за книгата

Автор
Denny D. Tang, Chi-Feng Pai
Език
Английски език
Корици
Книга - С твърди корици
Издадена
2021
страници
368
EAN
9781119562238
ISBN
1119562236
Enbook ID
32808351
Издател
John Wiley and Sons Ltd
Теглоt
628
Размери
238 x 160 x 27

Пълно описание

STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCEMagnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications.This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization.Among other topics, readers will benefit from the book's discussions of:* An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts* An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization* A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model* Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect* Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and othersPerfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.

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