Progress in Nano-Electro Optics IV

Name: Progress in Nano-Electro Optics IV
Brand: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
SKU: 9783642062261
Price: 157.54 EUR
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Characterization of Nano-Optical Materials and Optical Near-Field Interactions

Автор: Motoichi Ohtsu

Език:

Корици: С меки корици

Издател: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

Наличност: Външен склад

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This volume focuses on the characterization of nano-optical materials and optical-near field interac...

Информация за книгата

Автор

Motoichi Ohtsu

Език

Английски език

Корици

Книга - С меки корици

Издадена

2010

страници

208

EAN

9783642062261

ISBN

3642062261

Enbook ID

01651501

Издател

Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

Теглоt

349

Размери

155 x 235 x 13

Пълно описание

This volume focuses on the characterization of nano-optical materials and optical-near field interactions. It begins with the techniques for characterizing the magneto-optical Kerr effect and continues with methods to determine structural and optical properties in high-quality quantum wires with high spatial uniformity. Further topics include: near-field luminescence mapping in InGaN/GaN single quantum well structures in order to interpret the recombination mechanism in InGaN-based nano-structures; and theoretical treatment of the optical near field and optical near-field interactions, providing the basis for investigating the signal transport and associated dissipation in nano-optical devices. Taken as a whole, this overview will be a valuable resource for engineers and scientists working in the field of nano-electro-optics.This volume focuses on the characterization of nano-optical materials and optical near-field interactions. It begins with the techniques for characterizing the magneto-optical Kerr effect and continues with methods to determine structural and optical properties in high-quality quantum wires with high spatial uniformity. Further topics include: near-field luminescence mapping in InGaN/GaN single quantum well structures in order to interpret the recombination mechanism in InGaN-based nano-structures; and theoretical treatment of the optical near field and optical near-field interactions, providing the basis for investigating the signal transport and associated dissipation in nano-optical devices. Taken as a whole, this overview will be a valuable resource for engineers and scientists working in the field of nano-electro-optics.

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Progress in Nano-Electro Optics IV

Characterization of Nano-Optical Materials and Optical Near-Field Interactions

Информация за книгата

Пълно описание

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